VEC2812 Sanyo Semicon Device, VEC2812 Datasheet - Page 4

• Manufacturer Part Number: VEC2812
• Description: N-Channel Silicon MOSFET / Schottky Barrier Diode
• Manufacturer: Sanyo Semicon Device

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0.01
100
1.0
0.1
1.0
1.0
0.8
0.6
0.4
0.2
10
10
10
0.001
0
7
5
3
2
7
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
7
5
3
2
7
5
3
2
0.1
0
0
V DS =10V
I D =1.5A
V DD =10V
V GS =4V
2 3
20
2
5 7
1
Ambient Temperature, Ta -- C
40
0.01
Total Gate Charge, Qg -- nC
3
Drain Current, I D -- A
Drain Current, I D -- A
t f
SW Time -- I D
2 3
60
V GS -- Qg
2
P D -- Ta
y
t d (on)
5
fs -- I D
5 7
80
7
0.1
1.0
3
100
2 3
5 7
120
2
1.0
4
[MOSFET]
[MOSFET]
[MOSFET]
V DS =10V
[MOSFET]
140
3
IT02905
IT02907
IT07692
IT09926
2 3
160
VEC2812
5
5
5
1000
0.01
0.01
100
1.0
0.1
1.0
0.1
10
10
10
7
5
3
2
7
5
3
2
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
0.3
2 3
2
Ciss, Coss, Crss -- V DS
0.4
5 7
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
4
Diode Forward Voltage, V SD -- V
Operation in this
area is limited by R DS (on).
0.1
0.5
6
2 3
I S -- V SD
0.6
8
A S O
5 7 1.0
0.7
10
Ciss
0.8
12
2
2 3
0.8mm) 1unit
0.9
14
5 7 10
1.0
16
No. A0392-4/6
[MOSFET]
[MOSFET]
[MOSFET]
V GS =0V
f=1MHz
10 s
1.1
18
2 3
IT02906
IT02908
IT09925
1.2
20
5
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