QSZ1 Rohm, QSZ1 Datasheet - Page 2

• Manufacturer Part Number: QSZ1
• Description: General purpose transistor
• Manufacturer: Rohm

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Transistors
Tr1
Tr2
Tr1
Tr2
∗
∗
∗
∗
∗
∗
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
1
2
3
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1
2
3
Collector-base breakdown voltage
Collector-emitter breakdown viltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collerctor-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Absolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25°C)
Pulsed
Single pulse Pw=1ms.
Each terminal mounted on a recommended land.
Mounted on a 25mm 25mm
Single pulse Pw=1ms.
Each terminal mounted on a recommended land.
Mounted on a 25mm 25mm
Parameter
Parameter
Parameter
Parameter
t
0.8mm ceramic substrate.
t
0.8mm ceramic substrate.
Symbol
Symbol
V
V
V
Tstg
V
V
V
Tstg
I
P
CBO
CEO
I
Tj
EBO
CP
I
P
Tj
C
CBO
CEO
EBO
I
CP
C
C
C
Symbol
V
BV
BV
BV
Cob
Symbol
I
I
CE(sat)
h
V
CBO
BV
BV
BV
EBO
f
FE
Cob
CBO
CEO
T
I
I
EBO
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
EBO
T
−55 to +150
Limits
−55 to +150
500
1.25
150
Min.
0.9
−15
−12
270
15
12
−6
6
2
4
−
−
−
−
−
Limits
1.25
0.9
−15
−12
500
150
−6
−2
−4
Min.
270
15
12
6
−
−
−
−
−
−120
Typ.
360
15
−
−
−
−
−
−
W/Element
mW/Total
Typ.
W/Total
360
90
20
−
−
−
−
−
−
Unit
−100
−100
−180
Max.
°C
°C
680
V
V
V
A
A
W/Element
mW/Total
−
−
−
−
−
W/Total
Unit
°C
°C
V
V
V
A
A
Max.
100
100
180
680
∗
∗
∗
∗
−
−
−
−
−
MHz
1
2
3
3
Unit
mV
nA
nA
pF
V
V
V
−
∗
∗
∗
∗
1
2
3
3
MHz
Unit
mV
nA
nA
pF
V
V
V
−
I
I
I
V
V
I
V
V
V
C
C
E
C
= −10µA
CB
EB
CE
CE
CB
= −10µA
= −1mA
= −1mA, I
= −15V
= −6V
= −2V, I
= −2V, I
= −10V, I
I
I
I
V
V
I
V
V
V
C
C
E
C
=10µA
CB
EB
CE
CE
CB
=10µA
=1mA
=1A, I
=15V
=6V
=2V, I
=2V, I
=10V, I
B
C
E
Conditions
= −50mA
= −200mA
=200mA, f=100MHz
E
=0mA, f=1MHz
B
=50mA
C
E
Conditions
=200mA
=−200mA, f=100MHz
E
=0A, f=1MHz
∗
∗
∗
∗
QSZ1
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