HN1K04FU Toshiba Semiconductor, HN1K04FU Datasheet - Page 4

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HN1K04FU

Manufacturer Part Number
HN1K04FU
Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet
(Q1, Q2 common)
*: TOTAL rating
3000
1000
500
300
100
350
300
250
200
150
100
50
30
10
50
5
0
0.5
0
Common
source
V GS = 4 V
Ta = 25°C
20
1
Ambient temperature Ta (°C)
Drain current I
40
3
V
60
DS (ON)
P
D
* – Ta
80
10
– I
D
100
D
(mA)
120
30
140
100
160
4
1000
300
100
30
10
0.3
4 V
0
10 ms
V IN
t on
V IN
1
Drain current I
t r
t off
t f
I D
V DD = 5 V
t – I
V OUT
D
D
D.U. < = 1%
V IN : t r , t f < 5 ns
(Z out = 50 W)
Common source
Ta = 25°C
10
(mA)
HN1K04FU
2002-01-16
50

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