UMG6N ETC, UMG6N Datasheet - Page 2

• Manufacturer Part Number: UMG6N
• Description: General purpose (dual digital transistors)
• Manufacturer: ETC

Transistors
∗Transition frequency of the device.
Collector-base breakdown voltage
Emitter-base breakdown voltage
Emitter cutoff current
DC current transfer ratio
Collector-emitter breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Transition frequency
Input resistance
Electrical characteristics (Ta=25°C)
Electrical characteristics curves
500
200
100
50
20
10
1k
Fig.1 DC current gain vs. collector
5
2
1
100µ 200µ
COLLECTOR CURRENT : I
current
500µ 1m
Parameter
2m
Ta=100°C
5m 10m 20m
−40°C
25°C
C
V
(A)
CE
= 5V
50m 100m
Symbol
V
BV
BV
BV
I
I
CE(sat)
h
CBO
EBO
R
f
FE
T
CBO
CEO
EBO
500m
200m
100m
1
50m
20m
10m
5m
2m
1m
1
100µ 200µ
Fig.2 Collector-emitter saturation
COLLECTOR CURRENT : I
voltage vs. collector current
500µ 1m
32.9
Min.
100
50
50
5
−
−
−
−
Ta=100°C
2m
−40°C
25°C
Typ.
250
250
47
−
−
−
−
−
−
5m 10m 20m
C
Max.
l
61.1
C
600
(A)
0.5
0.5
0.3
/l
−
−
−
−
B
=10
50m 100m
EMG6 / UMG6N / FMG6A
MHz
Unit
µA
µA
kΩ
V
V
V
V
−
I
I
I
V
V
I
V
V
C
C
E
C
=50µA
CB
EB
CE
CE
=50µA
=1mA
/I
B
=50V
=4V
/I
=10V, I
=10mA/1mA
C
=5V/1mA
E
= −5mA, f=100MHz
Conditions
Rev.A
−
∗
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