DIM600XSM45-F000 Dynex Semiconductor, DIM600XSM45-F000 Datasheet - Page 4

• Manufacturer Part Number: DIM600XSM45-F000
• Description: Single Switch IGBT Module
• Manufacturer: Dynex Semiconductor

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DIM600XSM45-F000
ELECTRICAL CHARACTERISTICS
T
t
t
E
t
t
E
Q
Q
I
E
T
t
t
E
t
t
E
Q
I
E
4
Symbol
Symbol
d(off)
f
d(on)
r
d(off)
f
d(on)
r
rr
rr
/
case
OFF
ON
rec
case
OFF
ON
rec
g
rr
rr
7
= 25°C unless stated otherwise
= 125°C unless stated otherwise
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Parameter
Parameter
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
R
R
G(ON)
I
G(ON)
I
F
F
=600A,V
dI
=600A,V
Test Conditions
dI
Test Conditions
F
V
=4.7 R
V
C
F
/dt =2400A/us
=4.7 R
V
L ~200nH
V
C
/dt =2400A/us
I
CE
L ~200nH
ge
GE
I
C
CE
GE
ge
C
=600A
=2250V
=110nF
=600A
=±15V
=110nF
=2250V
=±15V
CE
CE
G(OFF)
=2250V,
G(OFF)
=2250V,
=11
=11
Min
Min
1500
3500
TBD
TBD
Typ.
250
700
200
750
1250
3000
TBD
TBD
TBD
6.0
Typ.
250
900
250
500
6.0
Max
Max
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us
ns
mJ
ns
ns
mJ
uC
A
mJ
Units
us
ns
mJ
ns
ns
mJ
uC
uC
A
mJ
Units