DIM600XSM45-F000 Dynex Semiconductor, DIM600XSM45-F000 Datasheet - Page 5

• Manufacturer Part Number: DIM600XSM45-F000
• Description: Single Switch IGBT Module
• Manufacturer: Dynex Semiconductor

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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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1400
1200
1000
800
600
400
200
0
2000
Conditions:
Rgoff=4.7
Cge=110nF
Vge=±15V
Vcc=3000V
Ls<120nH
Reverse bias safe operating area
2500
Collector emitter voltage, Vce - (V)
3000
3500
Tvj=125° C
Tvj=25°C
4000
4500
5000
100
900
800
700
600
500
400
300
200
100
10
IG B T
D io d e
1
0.001
0
0
Diode reverse bias safe operating area
500
R i ( °C /k W )
t
R i ( °C /k W )
t
i
i
( m s )
( m s )
Transient thermal impedance
0.01
1000
Rth IGBT
Rth diode
Reverse voltage, Vr - (V)
Pulse time, tp - (s)
1500
0 . 4 6
0 . 9 0
0 . 1 7
0 . 1 7
0.1
1
Tj=125°C
2000
2 .1 0
4 .2 2
8 .0 8
8 .0 8
2
2500
DIM600XSM45-F000
5 1 .9 2
5 1 .9 2
3 .6 4
7 .2 8
1
3000
3
1 1 .7 1
2 8 0 . 5
2 8 0 . 5
5 .8 6
3500
4
5
10
/
7
4000