TPD4125K Toshiba Semiconductor, TPD4125K Datasheet

Manufacturer Part Number

TPD4125K

Description

Intelligent Power Device High Voltage Monolithic Silicon Power IC

Manufacturer

Toshiba Semiconductor

Datasheet

1.TPD4125K.pdf (23 pages)

voltage PWM control. It is fabricated by high voltage SOI process.

It is three-shunt resistor circuit for current sensing. It contains

level shift high-side driver, low-side driver, IGBT outputs, FRDs

and protective functions for under voltage protection circuits and

thermal shutdown circuit. It is easy to control a DC brush less

motor by just putting logic inputs from a MPU or motor controller

to the TPD4125K.

Features

•

the environment is protected against electrostatic discharge.

The TPD4125K is a DC brush less motor driver using high

This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure that

High voltage power side and low voltage signal side terminal are separated.

It is the best for current sensing in three shunt resistance.

Bootstrap circuit gives simple high-side supply.

Bootstrap diodes are built in.

A dead time can be set as a minimum of 1.4 μs, and it is the best for a Sine-wave from drive.

3-phase bridge output using IGBTs.

FRDs are built in.

Included over-current and under-voltage protection, and thermal shutdown.

The regulator of 7V (typ.) is built in.

Package: 26-pin DIP.

High Voltage Monolithic Silicon Power IC

TOSHIBA Intelligent Power Device

TPD4125K

Weight : 3.8 g (typ.)

HDIP26-P-1332-2.00

www.DataSheet4U.com

TPD4125K

2008-05-13