TPD4125K Toshiba Semiconductor, TPD4125K Datasheet - Page 9

• Manufacturer Part Number: TPD4125K
• Description: Intelligent Power Device High Voltage Monolithic Silicon Power IC
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Operating power supply voltage
Current dissipation
Input voltage
Input current
Output saturation voltage
FRD forward voltage
BSD forward voltage
Regulator voltage
Current limiting voltage
Current limiting dead time
Thermal shutdown temperature
Thermal shutdown hysteresis
V
V
V
V
DIAG saturation voltage
Output on delay time
Output off delay time
Dead time
FRD reverse recovery time
CC
CC
BS
BS
under voltage protection
under voltage protection recovery
under voltage protection
under voltage protection recovery
Characteristics
(Ta = 25°C)
I
V
V
V
V
V
V
V
I
V
BS (OFF)
Symbol
BS (ON)
CC
CC
F (BSD)
V
ΔTSD
BS
BS
CEsat
DIAGsat
CEsat
t
V
TSD
V
V
V
I
V
dead
I
V
REG
V
t
t
I
CC
I
Dt
BB
t
on
off
BB
CC
IH
F
IL
F
IH
UVD
UVR
rr
IL
UVD
UVR
R
H
L
H
L
V
V
V
V
V
V
V
V
V
V
I
I
I
V
V
V
I
V
V
V
V
F
F
F
DIAG
BB
CC
BS
BS
IN
IN
IN
IN
CC
CC
CC
CC
CC
BB
BB
BB
BB
= 1.5 A, high side
= 1.5 A, low side
= 500 μA
= “H”, V
= “L” , V
= 5 V
= 0 V
= 450 V
= 15 V, high side ON
= 15 V, high side OFF
= 280 V, V
= 280 V, V
= 280 V, V
= 280 V, V
= 15 V
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V
= 15 V
= 5 mA
9
CC
CC
Test Condition
C
C
O
= 15 V
= 1.5 A, high side
= 1.5 A, low side
CC
CC
CC
CC
= 30 mA
= 15 V
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
C
C
C
C
= 1.5 A
= 1.5 A
= 1.5 A
= 1.5 A
13.5
0.46
10.5
Min
135
3.5
6.5
2.3
8.5
1.4
50
10
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⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
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8
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Typ.
11.5
280
220
200
200
0.8
2.4
2.4
1.6
1.6
0.9
0.5
3.3
9.5
1.3
1.0
15
⎯
⎯
⎯
⎯
⎯
⎯
50
11
⎯
⎯
7
9
TPD4125K
2008-05-13
Max
16.5
0.54
12.5
10.5
450
410
370
150
100
185
0.5
1.5
2.0
2.0
1.2
7.5
4.4
9.5
0.5
12
⎯
⎯
⎯
⎯
5
3
3
3
3
Unit
mA
μA
μA
μs
°C
°C
μs
μs
μs
ns
V
V
V
V
V
V
V
V
V
V
V
V