FP1189 WJ Communications, FP1189 Datasheet

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FP1189

Manufacturer Part Number
FP1189
Description
HFET
Manufacturer
WJ Communications
Datasheet

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DataSheet4U.com
www.DataSheet4U.com
DataSheet
Product Features
Applications
Specifications
1. I
2. Pinch-off voltage is measured when I
3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
4. Test conditions unless otherwise noted: T = 25ºC, V
5. 3OIP measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. The
Absolute Maximum Rating
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc
4
DC Parameter
Saturated Drain Current, I
Transconductance, G
Pinch Off Voltage, V
Thermal Resistance
Junction Temperature (3)
RF Parameter (4)
Frequency Range
Small Signal Gain
SS Gain (50 , unmatched)
Maximum Stable Gain
Output P1dB
Output IP3 (5)
Noise Figure
Parameter
Operating Case Temperature
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, V
Junction Temperature
50 – 4000 MHz
+27 dBm P1dB
+40 dBm Output IP3
High Drain Efficiency
20.5 dB Gain @ 900 MHz
MTTF >100 Years
SOT-89 SMT Package
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
a tuned application circuit with Z
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
U
dss
is measured with V
.com
FP1189
½-Watt HFET
gs
= 0 V, V
m
p
(2)
ds
L
Phone 1-800-WJ1-4401 FAX: 408-577-6621
= Z
= 3 V.
dss
dg
ds
LOPT
= 1.2 mA.
(1)
, Z
S
= Z
Units Min
Units Min
SOPT
MHz
dBm
dBm
C / W
mA
dB
dB
dB
dB
DS
mS
V
C
(optimized for output power).
= 8 V, I
Rating
-40 to +85 C
-55 to +125 C
2.0 W
6 dB above Input P1dB
+14 V
+220 C
The FP1189 is a high performance ½-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a
drain bias of +8 V and 125 mA to achieve +40 dBm
output IP3 performance and an output power of +27
dBm at 1-dB compression, while providing 20.5 dB
gain at 900 MHz.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP1189 has an associated MTTF
of greater than 100 years at a mounting temperature
of 85 C. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers
for wireless infrastructure where high performance
and high efficiency are required.
DQ
= 125 mA, frequency = 900 MHz in
220
50
17
Product Description
+27.4
Typ
Typ
20.5
+40
-2.1
900
290
155
2.7
24
DataSheet4U.com
Max
Max
4000
360
160
21
68
e-mail: sales@wj.com
Typical Performance
6. Typical parameters represent performance in an application circuit.
7. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz.
Ordering Information
Parameter (6)
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Channel Power (7)
Drain Voltage
Drain Current
Part No.
FP1189
FP1189-PCB900S
FP1189-PCB1900S
FP1189-PCB2140S
@ -45 dBc ACPR
Web site: www.wj.com
DataSheet4U.com
The Communications Edge
Specifications and information are subject to change without notice.
Units
MHz
dBm
dBm
dBm
Description
½ -Watt HFET
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
mA
dB
dB
dB
dB
V
Functional Diagram
Output / Drain
Product Information
+27.4
+39.9
Input / Gate
20.6
915
-6.0
+21
-13
RF IN
2.7
Function
Ground
1
Typical
GND
GND
2
4
+27.2
+40.4
+20.8
1960
15.7
-9.6
125
-26
3.7
+8
RF OUT
Pin No.
3
2, 4
TM
1
3
June 2003
+27.2
+39.7
+18.4
2140
14.7
-9.0
-24
4.3

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FP1189 Summary of contents

Page 1

... DataSheet U .com Product Description The FP1189 is a high performance ½-Watt HFET (Heterostructure FET low-cost SOT-89 surface- mount package. This device works optimally at a drain bias and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while providing 20.5 dB gain at 900 MHz. The device conforms to WJ Communications’ ...

Page 2

... FP1189 ½-Watt HFET S-Parameters (V S21, Maximum Stable Gain vs. Frequency DB(|S[2,1]|) DB(MSG Frequency (GHz) Note: Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines. The S-parameters shown are the de-embedded data down to the device leads and represents typical performance of the device. ...

Page 3

... FP1189 ½-Watt HFET Application Circuit: 870 – 960 MHz (FP1189-PCB900S) CAP POR T ID Ohm DataSheet4U.com TM 14 mil GETEK ML200DSS (ε r The main microstrip line has a line impedance of 50 Ω. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 ...

Page 4

... FP1189 ½-Watt HFET FP1189-PCB900S Application Circuit Performance Plots S11 vs. Frequency 0 -40c +25c -5 -10 -15 -20 -25 -30 860 880 900 920 Frequency (MHz) P1dB vs. Frequency -40c +25c 20 860 880 900 920 Frequency (MHz) OIP3 vs. Temperature freq = 915, 916 MHz ...

Page 5

... FP1189 ½-Watt HFET Application Circuit: 1930 – 1990 MHz (FP1189-PCB1900S) PORT Ohm CAP ID mil GETEKTM ML200DSS (εr = 4.2) DataSheet4U.com The main microstrip line has a line impedance of 50 Ω. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 4 DataSheet U .com The application circuit is matched for output power. ...

Page 6

... FP1189 ½-Watt HFET FP1189-PCB1900S Application Circuit Performance Plots S11 vs. Frequency 0 -40C +25C -5 -10 -15 -20 -25 -30 1930 1950 1970 Frequency (MHz) P1dB vs. Frequency -40C +25C 20 1930 1950 1970 Frequency (MHz) OIP3 vs. Temperature freq = 1960, 1961 MHz ...

Page 7

... FP1189 ½-Watt HFET Application Circuit: 2110 – 2170 MHz (FP1189-PCB2140S) CAP PORT ID Ohm CAP ID= C10 C= 1.5 pF DataSheet4U.com TM 14 mil GETEK ML200DSS (ε = 4.2) r The main microstrip line has a line impedance of 50 Ω. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 ...

Page 8

... FP1189 ½-Watt HFET FP1189-PCB2140S Application Circuit Performance Plots S11 vs. Frequency 0 -40c +25c -5 -10 -15 -20 -25 -30 2110 2130 2150 Frequency (MHz) P1dB vs. Frequency -40C +25C 20 2110 2130 2150 Frequency (MHz) OIP3 vs. Temperature freq = 2140, 2141 MHz ...

Page 9

... The active-bias circuit, shown on the right, uses dual PNP transistors to provide a constant drain current into the FP1189, while also eliminating the effects of pinchoff variation. This configuration is best suited for applications where the intended output power level of the amplifier is backed off at least 6 dB away from its compression point ...

Page 10

... DataSheet U .com The Communications Edge Product Marking The component will be marked with an “FP1189” designator with a four- or five-digit alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part is located on the website in the “Application Notes” section. ...

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