FP31QF ETC, FP31QF Datasheet - Page 10

• Manufacturer Part Number: FP31QF
• Description: 2-Watt HFET
• Manufacturer: ETC

The 3.5 GHz Reference Circuit is shown for design purposes only. An
evaluation board is not readily available for this application. The reader can
obtain any FP31QF evaluation board and modify it with the circuit shown to
achieve the performance shown in this reference design.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com
Circuit Board Material: .014” FR-4 (ε
The main microstrip line has a line impedance of 50 Ω.
4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
P =
Z=
P ORT
1
50 Ohm
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
Drain Bias = +9 V, I
(+18 dBm / tone, 1 MHz spacing)
FP31QF
2-Watt HFET
Typical RF Performance
ID=
CAP
C=
C1
2 2 pF
C2
ID=
IND
L =
r
= 4.6),
ds
L3
3.3 nH
= 450 mA, 25°C
The application circuit is matched for output power.
MHz
C3
dBm
dBm
dB
dB
dB
Reference Design: 3500 MHz
+33.5
3500
11.9
-8.8
+45
I D=
-16
ID=
R =
RES
CA P
C=
R1
2.2 O hm
C6
2 2 pF
ID =
CAP
C =
C7
100 0 pF
Loss=
TL INP
Eeff=
ID=
CAP
C=
Z0 =
F0 =
ID=
L =
ID=
C2
0.9 pF
CA P
C=
TL1
50 O hm
30 mil
3.46
0
0 MHz
C8
1.8e 4 pF
• Both the C2 and C3 placements are between the first and second via locations
• The via hole spacing along the main microstrip line is .040”.
• The distance from the edge of the FP31QF to the closer edge of L3 is .305”.
• The transmission line lengths shown in the schematic are from the FP31QF
-10
-15
-20
-25
Ref. Desig.
C1, C4, C8, C10
C2
C3
C6, C11
C7
C12
L1, L2
L3
R1
R2
Q1
C5
along the main microstrip line leading from the FP31QF device. Further
descriptions are shown in the diagram on the left.
device edge to the component edge.
15
10
-5
5
0
3.3
1
ID=
ID=
CAP
IND
C=
ID=
L =
RES
R=
NET=
-Vgg
SUB CKT
C5
DNP pF
L1
6.8 nH
R2
51 Ohm
ID=
3.35
2
Q1
"FP31QF"
DB(|S[1,1]|)
The Communications Edge
Vds=9V @ 450 mA
Specifications and information are subject to change without notice
Value
22 pF
0.9 pF
1.0 pF
0.018 µF
1000 pF
0.1 µF
6.8 nH
3.3 nH
2.2 Ω
50 Ω
FP31QF
3.4
Measured S-Parameters
ID=
Bill of Materials
IND
Loss=
L =
TL INP
Eeff=
3.45
Z0 =
F0 =
ID=
L2
6.8 nH
L =
DB(|S[2,1]|)
Frequency (GHz)
TL2
50 Ohm
65 mil
3 .46
0
0 MHz
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Wirewound chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 2W HFET
Do Not Place
3.5
Product Information
3.55
ID=
CAP
C=
ID=
DB(|S[2,2]|)
ID=
ID =
CAP
C=
CAP
C=
C =
CAP
C12
1e 5 pF
C3
1 pF
C11
1.8e 4 pF
C10
2 2 pF
ID=
CAP
C=
C4
2 2 pF
3.6
P =
Z=
P ORT
QFN 6x6
Size
0603
0603
0603
0805
0603
1206
0805
0603
0603
0603
3.65
2
50 Ohm
November 2004
TM
3.7