H11-A1 ETC, H11-A1 Datasheet - Page 2

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H11-A1

Manufacturer Part Number
H11-A1
Description
Search -----> H11A1
Manufacturer
ETC
Datasheet
ELECTRICAL CHARACTERISTICS
INPUT LED
OUTPUT TRANSISTOR
COUPLED
H11A1
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Output Collector Current (I F = 10 mA, V CE = 10 V)
Forward Voltage (I F = 10 mA,
Reverse Leakage Current (V R = 3 V)
Capacitance (V = 0 V, f = 1 MHz)
Collector–Emitter Dark Current (V CE = 10 V)
Collector–Base Dark Current (V CB = 10 V)
Collector–Emitter Breakdown Voltage (I C = 10 mA)
Collector–Base Breakdown Voltage (I C = 100 A)
Emitter–Collector Breakdown Voltage (I E = 100 A)
DC Current Gain (I C = 5 mA, V CE = 5 V) (Typical Value)
Collector–Emitter Capacitance (f = 1 MHz, V CE = 0 V)
Collector–Base Capacitance (f = 1 MHz, V CB = 0 V)
Emitter–Base Capacitance (f = 1 MHz, V EB = 0 V)
Collector–Emitter Saturation Voltage (I C = 0.5 mA, I F = 10 mA)
Turn–On Time (I F = 10 mA, V CC = 10 V, R L = 100 ) (3)
Turn–Off Time (I F = 10 mA, V CC = 10 V, R L = 100 ) (3)
Rise Time (I F = 10 mA, V CC = 10 V, R L = 100 ) (3)
Fall Time (I F = 10 mA, V CC = 10 V, R L = 100 ) (3)
Isolation Voltage (f = 60 Hz, t = 1 sec) (4)
Isolation Resistance (V = 500 V) (4)
Isolation Capacitance (V = 0 V, f = 1 MHz) (4)
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I C /I F x 100%.
3. For test circuit setup and waveforms, refer to Figure 11.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2
Characteristic
(T A = 25 C unless otherwise noted) (1)
H11A1
T A = 25 C)
T A = –55 C
T A = 100 C
T A = 25 C
T A = 100 C
T A = 25 C
T A = 100 C
I C (CTR) (2)
V (BR)CEO
V (BR)CBO
V (BR)ECO
V CE(sat)
Symbol
I CEO
I CBO
V ISO
R ISO
C ISO
C CE
C CB
C EB
h FE
V F
t on
t off
C J
I R
t r
t f
5 (50)
7500
10 11
Min
30
70
7
Motorola Optoelectronics Device Data
12 (120)
Typ (1)
1.15
1.05
0.01
100
100
500
1.3
0.2
7.8
0.1
2.8
4.5
1.2
1.3
0.2
18
45
19
1
1
7
9
Max
1.5
0.4
10
50
20
mA (%)
Vac(pk)
Volts
Volts
Volts
Volts
Volts
Unit
nA
nA
pF
pF
pF
pF
pF
A
A
s
s
s
s

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