MOC256 Motorola, MOC256 Datasheet - Page 2

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MOC256

Manufacturer Part Number
MOC256
Description
SMALL OUTLINE OPTOISOLATORS AC INPUT TRANSISTOR OUTPUT
Manufacturer
Motorola
Datasheet

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ELECTRICAL CHARACTERISTICS
INPUT LED
OUTPUT TRANSISTOR
COUPLED
MOC256
Forward Voltage
Capacitance (V = 0 V, f = 1 MHz)
Collector–Emitter Dark Current
Collector–Base Dark Current (V CB = 10 V)
Collector–Emitter Breakdown Voltage (I C = 10 mA)
Collector–Base Breakdown Voltage (I C = 100 A)
Emitter–Collector Breakdown Voltage (I E = 100 A)
DC Current Gain (I C = 2 mA, V CE = 5 V)
Collector–Emitter Capacitance (f = 1 MHz, V CE = 0 V)
Collector–Base Capacitance (f = 1 MHz, V CB = 0 V)
Emitter–Base Capacitance (f = 1 MHz, V EB = 0 V)
Output Collector Current
Output Collector Current Symmetry (3)
Collector–Emitter Saturation Voltage (I C = 0.5 mA, I F =
Input–Output Isolation Voltage (f = 60 Hz, t = 1 sec) (4,5)
Isolation Resistance (V = 500 V) (5)
Isolation Capacitance (V = 0 V, f = 1 MHz) (5)
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I C /I F x 100%.
3. This specification guarantees that the higher of the two I C readings will be no more than 3 times the lower at I F = 10 mA.
4. Input–Output Isolation Voltage, V ISO , is an internal device dielectric breakdown rating.
5. For this test, pins 1 and 2 are common, and pins 5, 6 and 7 are common.
2
(I F = 10 mA, either direction)
(V CE = 10 V)
T A = 100 C
(I F =
"
10 mA, V CE = 10 V)
I
C
I
C
at I
at I
Characteristic
F
F
+ )
+
–10 mA, V
10 mA, V
(T A = 25 C unless otherwise noted) (1)
CE
CE
+
+
10 V
10 V
"
10 mA)
I C (CTR) (5)
V (BR)CEO
V (BR)CBO
V (BR)ECO
V CE(sat)
Symbol
I CEO
I CBO
V ISO
R ISO
C ISO
C CE
C CB
C EB
h FE
V F
C J
2 (20)
3000
10 11
Min
0.5
30
70
5
Motorola Optoelectronics Device Data
15 (150)
Typ (1)
1.15
100
500
0.2
7.8
1.0
0.1
0.2
20
45
20
10
1
1
7
Max
100
1.5
2.0
0.4
Vac(rms)
mA (%)
Volts
Volts
Volts
Volts
Volts
Unit
nA
nA
pF
pF
pF
pF
pF
A

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