RBV602D EIC discrete Semiconductors, RBV602D Datasheet

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RBV602D

Manufacturer Part Number
RBV602D
Description
SILICON BRIDGE RECTIFIERS
Manufacturer
EIC discrete Semiconductors
Datasheet
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Notes :
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RBV600D - RBV610D SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
* Ideal for printed circuit board
* Very good heat dissipation
* Case : Reliable low cost construction
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55 C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
1. Thermal Resistance from junction to case w ith units mounted on a 2.6"x1.4"x0.06" THK (6.5cm.x3.5cm.x0.15cm.) Al. Plate. Heatsink.
utilizing molded plastic technique
MIL-STD-202, Method 208 guaranteed
RATING
Ta = 25 C
Ta = 100 C
F
= 6.0 Amps.
DC
SYMBOL
R JC
V
V
I
T
I
I
V
F(AV)
FSM
R(H)
RRM
V
RMS
I
T
I
STG
DC
2
R
F
t
J
C3
600D
RBV
50
35
50
Dimensions in millimeters
601D
RBV
100
100
70
602D
RBV
200
140
200
RBV25
- 40 to + 150
- 40 to + 150
604D
RBV
400
280
400
300
127
200
6.0
1.0
2.2
10
UPDATE : AUGUST 3, 1998
606D
RBV
600
420
600
608D
RBV
800
560
800
610D
1000
1000
RBV
700
Amps.
Amps.
UNIT
Volts
Volts
Volts
Volts
A
C/W
2
C
C
A
A
S

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RBV602D Summary of contents

Page 1

RBV600D - RBV610D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * ...

Page 2

RATING AND CHARACTERISTIC CURVES ( RBV600D - RBV610D ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 6.0 5.0 4.0 3.0 2.0 1.0 HEAT-SINK MOUNTING, Tc 2.6" x 1.4" x 0.06" THK. (6.5cm x 3.5cm x 0.15cm) Al.-PLATE 0 0 ...

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