RBV602D EIC discrete Semiconductors, RBV602D Datasheet - Page 2

• Manufacturer Part Number: RBV602D
• Description: SILICON BRIDGE RECTIFIERS
• Manufacturer: EIC discrete Semiconductors

0.01
FIG.1 - DERATING CURVE FOR OUTPUT
5.0
4.0
3.0
2.0
1.0
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
6.0
100
1.0
0.1
10
0
0.4
0
RATING AND CHARACTERISTIC CURVES ( RBV600D - RBV610D )
(6.5cm x 3.5cm x 0.15cm) Al.-PLATE
RECTIFIED CURRENT
PER DIODE
0.6
25
HEAT-SINK MOUNTING, Tc
FORWARD VOLTAGE, VOLTS
CASE TEMPERATURE, ( C)
2.6" x 1.4" x 0.06" THK.
0.8
50
1.0
75
Pulse Width = 300 s
1.2
100
1 % Duty Cycle
T
J
= 25 C
125
1.4
150
1.6
175
1.8
0.01
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
160
240
200
120
1.0
0.1
80
10
40
0
0
1
8.3 ms SINGLE HALF SINE WAVE
PERCENT OF RATED REVERSE
FORWARD SURGE CURRENT
PER DIODE
20
NUMBER OF CYCLES AT 60Hz
2
JEDEC METHOD
40
4
VOLTAGE, (%)
T
6
60
J
= 25 C
10
T
80
J
T
= 100 C
J
20
= 50 C
100
40
120
60
140
100