DCR1478SY Dynex Semiconductor, DCR1478SY Datasheet - Page 4

• Manufacturer Part Number: DCR1478SY
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DCR1478SY
DYNAMIC CHARACTERISTICS
GATE TRIGGER CHARACTERISTICS AND RATINGS
4/8
Symbol
Symbol
I
RRM
dV/dt
V
P
dI/dt
V
V
V
I
P
V
V
I
FGM
T(TO)
t
G(AV)
RGM
r
I
I
FGM
t
GT
FGN
gd
/I
GM
T
L
H
GT
GD
q
DRM
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Latching current
Holding current
Turn-off time
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Parameter
Parameter
At V
To 67% V
From 67% V
Gate source 20V, 10
t
At T
At T
V
t
T
T
I = 1000A, t = 1ms, T
V = 50V, dI/dt = 20A/ s, V
V
V
V
At V
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table, gate characteristics curve
r
r
D
j
j
DRM
DRM
DRM
= 25
= 25
0.5 s to 1A, T
= 67% V
0.5 s, T
vj
vj
RRM
DRM
, dV
= 5V, T
= 5V, T
= 125
= 125
o
o
/V
C, V
C, R
T
DR
DRM
case
DRM
/dt = 8V/ s linear
o
o
DRM
j
D
g-k
C
C
, T
DRM
case
= 125
T
= 25
case
= 5V
j
= 125
=
, Gate source 30V, 15
case
= 25
j
= 25
Conditions
to 1000A
= 125
o
C
o
= 125
C
o
o
C.
o
Conditions
j
C
C
= 125
o
C
o
C
DR
o
C,
= 67%
Repetitive 50Hz
Non-repetitive
www.dynexsemi.com
Typ.
500
300
-
-
-
-
-
-
-
-
1000
Max.
1000
Max.
0.31
0.25
0.25
100
300
500
250
400
150
2.5
1.4
4.0
30
30
10
5
-
Units
Units
V/ s
A/ s
A/ s
mA
m
mA
mA
mA
W
W
V
V
V
V
A
V
V
s
s