DCR1478SY Dynex Semiconductor, DCR1478SY Datasheet - Page 6

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DCR1478SY

Manufacturer Part Number
DCR1478SY
Description
Phase Control Thyristor
Manufacturer
Dynex Semiconductor
Datasheet
DCR1478SY
6/8
100000
0.0001
10000
0.001
1000
Fig.6 Transient thermal impedance - junction to case
0.01
0.1
0.001
0.1
Rate of decay of on-state current, dI/dt - (A/µs)
t
p
dI/dt
0.01
I
T
Fig.4 Stored charge
1.0
I
RM
Q
0.1
S
3 phase 120˚
Time - (s)
6 phase 60˚
Conduction
Halfwave
Conditions:
Q
T
d.c.
j
S
= 125˚C
is total integral stored charge
1
Effective thermal resistance
Double side
0.0095
0.0105
0.0112
0.0139
Junction to case ˚C/W
10
Double side cooled
Anode side cooled
10
I
T
= 1400A
Anode side
0.0207
0.0234
0.019
0.020
100
100
Fig.7 Surge (non-repetitive) on-state current vs time (with
V
20
10
50
40
30
FGM
100
0
0.1
10
0.001
1
1
Table gives pulse power P
Pulse width
10ms
1ms
100
200
500
µs
I
ms
2
t
Fig.5 Gate characteristics
50% V
0.01
Pulse frequency Hz
150
150
150
150
50
20
Gate trigger current, I
10
RSM
100
150
150
150
100
-
1
Duration
at T
400
150
125
100
25
-
GM
case
2 3 45
Cycles at 50Hz
0.1
www.dynexsemi.com
in Watts
= 125˚C)
2W
5W
GT
10W
10
- (A)
20W
I
1
2
t = Î
20 30
50W
100W
2
2
x t
50
2.5
2.0
1.5
1.0
10

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