ESD5V3L1B Infineon Technologies, ESD5V3L1B Datasheet - Page 9

• Manufacturer Part Number: ESD5V3L1B
• Description: TVS Diode
• Manufacturer: Infineon Technologies

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Table 3-3
Parameter
Line capacitance
Serie inductance
Table 3-4
Parameter
Clamping voltage
Dynamic resistance
1) Please refer to Application Note AN210 [1]. TLP parameter: Z
Final Data Sheet
to t
I
PP2
2
= 40 A.
= 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between I
RF Characteristics at
ESD Characteristics at
1)
1)
Symbol
C
L
Symbol
V
R
S
CL
DYN
L
T
Min.
4
–
Min.
–
–
–
–
–
–
A
T
= 25 °C, unless otherwise specified
A
= 25 °C, unless otherwise specified
Typ.
–
0.4
0.2
Typ.
10.2
13.2
12.1
17.2
0.22
0.37
Values
Values
9
0
= 50 Ω , t
Max.
7
–
Max.
–
–
–
–
–
–
p
= 100ns, t
r
= 300ps, averaging window: t
Unit
pF
nH
Unit
V
V
Ω
Ω
ESD5V3L1B Series
Revision 1, 2011-08-04
Note /
Test Condition
V
PG-TSLP-2-17
PG-TSSLP-2-1
Note /
Test Condition
I
I
from Pin 1 to Pin 2
I
I
Pin 1 to Pin 2
Pin 2 to Pin 1
from Pin 1 to Pin 2
from Pin 2 to Pin 1
from Pin 2 to Pin 1
PP
PP
PP
PP
R
= 0 V,
= 16 A,
= 30 A,
= 16 A,
= 30 A,
PP1
Characteristics
= 10 A and
f
= 1 MHz
1
= 30 ns
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