MBM29LV160TM Fujitsu Media Devices, MBM29LV160TM Datasheet - Page 30
MBM29LV160TM
Manufacturer Part Number
MBM29LV160TM
Description
(MBM29LV160BM/TM) FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM
Manufacturer
Fujitsu Media Devices
Datasheet
1.MBM29LV160TM.pdf
(57 pages)
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30
MBM29LV160TM/BM
Write Cycle Time
Address Setup Time
Address Setup Time to OE Low During
Toggle Bit Polling
Address Hold Time
Address Hold Time from CE or OE High
During Toggle Bit Polling
Data Setup Time
Data Hold Time
Output Enable Setup Time
CE High During Toggle Bit Polling
OE High During Toggle Bit Polling
Read Recover Time Before Write
Read Recover Time Before Write
CE Setup Time
WE Setup Time
CE Hold Time
WE Hold Time
CE Pulse Width
Write Pulse Width
CE Pulse Width High
Write Pulse Width High
Programming Time
Sector Erase Operation *
V
Recovery Time From RY/BY
(OE High to WE Low)
(OE High to CE Low)
CC
• Write (Erase/Program) Operations
Setup Time
Parameter
1
Word
Byte
90
JEDEC
t
t
t
t
t
t
t
t
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
WLWH
WHWL
DVWH
WHDX
GHWL
WHEH
EHWH
AVWL
WLAX
GHEL
ELWL
WLEL
AVAV
ELEH
EHEL
—
—
—
—
—
—
—
Symbol
Standard
t
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
GHWL
t
t
CEPH
OEPH
GHEL
t
t
t
t
t
t
t
t
t
t
t
WPH
t
ASO
OES
CPH
VCS
AHT
WC
WS
WH
WP
DH
CH
AS
AH
DS
CS
CP
RB
Min
90
15
45
35
20
20
35
35
25
30
50
0
0
0
0
0
0
0
0
0
0
0
Value
Typ
1.0
25
25
Max
(Continued)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
s
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