MBM29LV160TM Fujitsu Media Devices, MBM29LV160TM Datasheet - Page 32
MBM29LV160TM
Manufacturer Part Number
MBM29LV160TM
Description
(MBM29LV160BM/TM) FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM
Manufacturer
Fujitsu Media Devices
Datasheet
1.MBM29LV160TM.pdf
(57 pages)
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32
MBM29LV160TM/BM
Note : Test conditions T
Note : Test conditions T
Sector Erase Time
Programming Time
Chip Programming Time
Erase/Program Cycle
Input Capacitance
Output Capacitance
Control Pin Capacitance
OE Pin and RESET Pin Capacitance
Input Capacitance
Output Capacitance
Control Pin Capacitance
OE Pin and RESET Pin Capacitance
ERASE AND PROGRAMMING PERFORMANCE
TSOP (1) PIN CAPACITANCE
FBGA PIN CAPACITANCE
Parameter
Parameter
Parameter
A
A
= 25°C, f = 1.0 MHz
= 25°C, f = 1.0 MHz
100,000
Min
—
—
—
Symbol
Symbol
C
C
C
C
C
C
C
C
90
OUT
OUT
IN2
IN3
IN2
IN3
Value
IN
IN
Typ
25
—
—
1
V
V
V
V
V
V
V
V
IN
OUT
IN
IN
IN
OUT
IN
IN
1000
Max
100
= 0
= 0
= 0
= 0
= 0
= 0
15
—
Test Setup
Test Setup
= 0
= 0
cycle
Unit
µs
s
s
Excludes programming time prior to
erasure
Excludes system-level overhead
Typ
Typ
8.5
8.5
20
15
8
8
8
8
Value
Value
Remarks
Max
Max
10
12
10
25
10
12
10
20
Unit
Unit
pF
pF
pF
pF
pF
pF
pF
pF
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