MBM29PL32BM Fujitsu Media Devices, MBM29PL32BM Datasheet - Page 36

• Manufacturer Part Number: MBM29PL32BM
• Description: (MBM29PL32TM/BM) FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash
• Manufacturer: Fujitsu Media Devices

36
MBM29PL32TM/BM
*1 : Voltage is defined on the basis of VSS = GND = 0 V.
*2 : Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may undershoot
*3 : Minimum DC input voltage is –0.5V. During voltage transitions, these pins may undershoot V
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
* : Voltage is defined on the basis of V
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
Storage Temperature
Ambient Temperature with Power Applied
Voltage with Respect to Ground All Pins Except
A
Power Supply Voltage *
Input Voltage A
Input Voltage WP/ACC *
Ambient Temperature
V
9
CC
, OE, and RESET *
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
V
transitions, input or I/O pins may overshoot to V
periods of up to 20 ns.Voltage difference between input and supply voltage ( V
+9.0 V. Maximum DC input voltage is +12.5 V which may overshoot to +14.0 V for periods of up to 20 ns .
Supply Voltage *
SS
to –0.2 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is V
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
9
, OE, and RESET *
Parameter
1,
*
2
1
Parameter
1,
*
3
1,
*
3
SS
90
10
= GND = 0V.
90/10
CC
V
Symbol
+2.0 V for periods of up to 20 ns
IN
Tstg
V
V
, V
V
T
ACC
CC
IN
A
OUT
Symbol
V
T
CC
A
–0.5
–0.5
–0.5
–0.5
Min
–55
–20
+3.0
Min
–20
–20
Rating
IN
–V
Value
CC
CC
) dose not exceed to
V
+0.5 V. During voltage
+12.5
+12.5
CC
+125
+4.0
Max
+85
+0.5
Max
+3.6
+70
+85
SS
to –0.2 V for
Unit
°C
°C
Unit
V
V
V
V
°C
V