MBM29SL800BE Fujitsu Media Devices, MBM29SL800BE Datasheet - Page 16

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MBM29SL800BE

Manufacturer Part Number
MBM29SL800BE
Description
(MBM29SL800TE/BE) FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
Manufacturer
Fujitsu Media Devices
Datasheet

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16
MBM29SL800TE/BE
Reset Command
Autoselect Command
Byte/Word Programming
COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register.
“MBM29SL800TE/BE Standard Command Definitions” in DEVICE BUS OPERATION defines the valid register
command sequences. Note that the Erase Suspend (B0h) and Erase Resume (30h) commands are valid only
while the Sector Erase operation is in progress. Moreover both Reset commands are functionally equivalent,
resetting the device to the read mode. Please note that commands are always written at DQ
to DQ
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
is initiated by writing the Reset command sequence into the command register. The device remains enabled for
reads until the command register contents are altered.
The device will automatically power-up in the reset state. In this case, a command sequence is not required to
read data.
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM pro-
grammers typically access the signature codes by raising A
onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming method-
ology. The operation is initiated by writing the Autoselect command sequence into the command register.
Following the command write, a read cycle from address XX00h retrieves the manufacture code of 04h. A read
cycle from address XX01h for 16 (XX02h for 8) returns the device code (MBM29SL800TE
MBM29SL800BE
mode) . (See “MBM29SL800TE/BE Sector Protection Verify Autoselect Codes” and “Extended Autoselect Code”
in DEVICE BUS OPERATION.) All manufacturer and device codes will exhibit odd parity with DQ
the parity bit. Sector state (protection or unprotection) will be informed by address XX02h for 16 (XX04h for 8) .
Scanning the sector addresses (A
logical “1” at device output DQ
mode on the protected sector. (See “MBM29SL800TE/BE User Bus Operations (BYTE
“MBM29SL800TE/BE User Bus Operations (BYTE
To terminate the operation, it is necessary to write the Reset command sequence into the register, and also to
write the Autoselect command during the operation, execute it after writing Reset command
sequence.
The devices are programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus cycle
operation. There are two “unlock” write cycles. These are followed by the program set-up command and data
write cycles. Addresses are latched on the falling edge of CE or WE, whichever happens later and the data is
latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever
happens first) begins programming. Upon executing the Embedded Program Algorithm command sequence,
the system is not required to provide further controls or timings. The device will automatically provide adequate
internally generated program pulses and verify the programmed cell margin.
The automatic programming operation is completed when the data on DQ
bit at which time the devices return to the read mode and addresses are no longer latched. (See “Hardware
Sequence Flags”.) Therefore, the devices require that a valid address to the devices be supplied by the system
at this particular instance of time. Hence, Data Polling must be performed at the memory location which is being
programmed.
If hardware reset occurs during the programming operation, it is impossible to guarantee the data are being
written.
8
bits are ignored.
6Bh for 8 mode; MBM29SL800TE
0
for a protected sector. The programming verification should be perform margin
18
, A
17
, A
-90/10
16
, A
15
, A
14
, A
V
IL
13
) ” in DEVICE BUS OPERATION.)
, and A
9
22EAh and MBM29SL800BE
to a high voltage. However, multiplexing high voltage
12
) while (A
5
1) to Read mode, the Reset operation
7
6
is equivalent to data written to this
, A
1
, A
0
)
(0, 1, 0) will produce a
226Bh for 16
7
to DQ
7
V
0
defined as
IH
and DQ
EAh and
) ” and
15

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