TIM1011-2L Toshiba Semiconductor, TIM1011-2L Datasheet - Page 2

• Manufacturer Part Number: TIM1011-2L
• Description: MICROWAVE POWER GaAs FET
• Manufacturer: Toshiba Semiconductor

ABSOLUTE MAXIMUM RATINGS ( Ta= 25
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
HANDLING PRECAUTIONS FOR PACKAGED TYPE
HANDLING PRECAUTIONS FOR PACKAGED TYPE
at 260
at 260 C. C. C. C.
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
HANDLING PRECAUTIONS FOR PACKAGED TYPE
HANDLING PRECAUTIONS FOR PACKAGED TYPE
at 260
at 260
PACKAGE OUTLINE (2-9D1B)
PACKAGE OUTLINE (2-9D1B)
PACKAGE OUTLINE (2-9D1B)
PACKAGE OUTLINE (2-9D1B)
Total Power Dissipation (Tc= 25 C)
Soldering iron should be grounded and the operating time should not exceed 10 seconds
Soldering iron should be grounded and the operating time should not exceed 10 seconds
Soldering iron should be grounded and the operating time should not exceed 10 seconds
Soldering iron should be grounded and the operating time should not exceed 10 seconds
4-R2.4
Channel Temperature
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Storage
13.0 0.3
17.0 MAX.
8.5 MAX.
0.5 0.15
2
SYMBOL
V
V
T
I
T
P
DS
DS
GS
stg
ch
T
-65
RATING
C )
C )
C )
175
2.6
15
15
-5
+175
Gate
Source
Drain
Unit : mm
TIM1011-2L
UNIT
W
V
V
A
C
C