TIM1011-2L Toshiba Semiconductor, TIM1011-2L Datasheet - Page 4

• Manufacturer Part Number: TIM1011-2L
• Description: MICROWAVE POWER GaAs FET
• Manufacturer: Toshiba Semiconductor

2 5
2 5
2 0
2 0
1 5
1 5
1 0
1 0
2 5
2 5
2 0
2 0
1 5
1 5
1 0
1 0
-10
-10
-10
-10
-20
-20
-20
-20
-30
-30
-30
-30
-40
-40
-40
-40
-50
-50
-50
-50
-60
-60
-60
-60
5 5 5 5
0 0 0 0
P O W E R D I S S IP A TI O N V S . C A S E T E M P E R A T U R E
P O W E R D I S S IP A TI O N V S . C A S E T E M P E R A T U R E
P O W E R D I S S IP A TI O N V S . C A S E T E M P E R A T U R E
P O W E R D I S S IP A TI O N V S . C A S E T E M P E R A T U R E
0 0 0 0
17 17 17 17
f = 11.7 GHz
VDS = 9 V
IDS
f= 5MHz
IM3 vs. OUTPUT POWER CHARACTERISTICS
IM3 vs. OUTPUT POWER CHARACTERISTIC
IM3 vs. OUTPUT POWER CHARACTERISTICS
IM3 vs. OUTPUT POWER CHARACTERISTICS
IM3 vs. OUTPUT POWER CHARACTERISTIC
1.0 A
19 19 19 19
4 0
4 0
4 0
4 0
Po(dBm), Single Carrier
Po (dBm), Single Carrie
Po (dBm), Single Carrie
Po (dBm), Single Carrie
Po (dBm), Single Carrie
21 21 21 21
8 0
8 0
8 0
8 0
T c (℃ )
T c (℃ )
T c (℃ )
T c (℃ )
23 23 23 23
1 2 0
1 2 0
1 2 0
1 2 0
4
25 25 25 25
1 6 0
1 6 0
1 6 0
1 6 0
27 27 27 27
2 0 0
2 0 0
2 0 0
2 0 0
29 29 29 29
TIM1011-2L