TIM5964-35SLA-251 Toshiba Semiconductor, TIM5964-35SLA-251 Datasheet - Page 2
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TIM5964-35SLA-251
Manufacturer Part Number
TIM5964-35SLA-251
Description
MICROWAVE POWER GaAs FET
Manufacturer
Toshiba Semiconductor
Datasheet
1.TIM5964-35SLA-251.pdf
(4 pages)
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
PACKAGE OUTLINE (2-16G1B)
HANDLING PRECAUTIONS FOR PACKAGED TYPE
HANDLING PRECAUTIONS FOR PACKAGED TYPE
260 C.
HANDLING PRECAUTIONS FOR PACKAGED TYPE
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 C)
Channel Temperature
Storage
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
4 – – – – C1.0
CHARACTERISTICS
16.4 MAX.
24.5 MAX.
20.4 0.3
TIM5964-35SLA-251
0.7 0.15
2
SYMBOL
V
V
T
I
T
P
DS
stg
DS
GS
ch
T
UNIT
W
V
V
A
C
C
www.DataSheet4U.com
Unit in mm
-65
RATING
Gate
Source
Drain
115
175
15
26
-5
+175