ph5330e NXP Semiconductors, ph5330e Datasheet - Page 7

• Manufacturer Part Number: ph5330e
• Description: N-channel Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PH5330E_2
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
10
20
15
10
5
0
8
6
4
2
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
10
5
V
GS
20
= 3 V
10
30
15
3.3 V
3.5 V
3.1 V
3.2 V
10 V
40
4 V
5 V
Q
003aaa481
003aaa484
I
G
D
(nC)
(A)
Rev. 02 — 19 October 2009
20
50
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
10
10
10
a
C
1.5
0.5
4
3
2
2
1
0
10
−60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
N-channel TrenchMOS logic level FET
0
1
60
10
120
PH5330E
V
© NXP B.V. 2009. All rights reserved.
DS
003aaa482
T
C
C
C
j
(V)
( ° C)
oss
iss
03aa27
rss
180
10
2
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