ipp05cn10ng Infineon Technologies Corporation, ipp05cn10ng Datasheet - Page 2

• Manufacturer Part Number: ipp05cn10ng
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.07
1)
2)
3)
4)
5)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
J-STD20 and JESD22
Current is limited by bondwire; with an R
See figure 3
T
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
jmax
=150 °C and duty cycle D=0.01 for V
j
=25 °C, unless otherwise specified
thJC
Symbol Conditions
R
R
V
V
I
I
R
R
g
gs
DSS
GSS
fs
<-5V
(BR)DSS
GS(th)
=0.5 K/W the chip is able to carry 161 A.
thJC
thJA
DS(on)
G
minimal footprint
6 cm
V
V
V
T
V
T
V
V
TO220, TO262
V
TO263
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=100 A
DS
=V
=80 V, V
=80 V, V
=0 V, I
=20 V, V
=10 V, I
=10 V, I
|>2|I
2
cooling area
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
D
=250 µA
GS
GS
DS
DS(on)max
=100 A,
=100 A,
=0 V,
=0 V,
=0 V
5)
,
IPB05CN10N G
min.
100
81
2
-
-
-
-
-
-
-
-
-
Values
typ.
162
0.1
4.1
3.8
1.8
10
3
1
-
-
-
-
IPP05CN10N G
IPI05CN10N G
max.
100
100
0.5
5.4
5.1
62
40
4
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2007-08-29