ipp05cn10ng Infineon Technologies Corporation, ipp05cn10ng Datasheet - Page 6

• Manufacturer Part Number: ipp05cn10ng
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.07
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
12
10
DS
=f(T
8
6
4
2
0
5
4
3
2
1
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=100 A; V
20
20
Crss
Coss
Ciss
98 %
GS
V
T
=10 V
DS
j
60
40
[°C]
[V]
typ
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
IPB05CN10N G
=V
0.5
DS
20
175 °C
250 µA
V
T
SD
j
60
[°C]
1
25 °C, 98%
[V]
2500 µA
25 °C
100
IPP05CN10N G
IPI05CN10N G
1.5
175 °C, 98%
140
2007-08-29
180
2