sch2819 Sanyo Semiconductor Corporation, sch2819 Datasheet
sch2819
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sch2819 Summary of contents
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... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SCH2819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications ...
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... Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 SCH2819 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =30V =0V I GSS 8V = (off =10V =1mA yfs V DS =10V =800mA R DS (on =800mA = (on =400mA ...
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... Drain-to-Source Voltage (on 500 450 400 350 I D =800mA 300 400mA 250 200 150 100 Gate-to-Source Voltage SCH2819 t rr Test Circuit [SBD] Duty 10 OUT [MOSFET] 2.0 1.8 1.6 1.4 1.5V 1.2 1.0 0.8 0.6 0.4 0 =1.0V 0.6 0.7 0.8 0.9 1.0 IT06102 [MOSFET] 500 Ta=25 C 450 ...
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... Drain Current 4 =10V I D =1.5A 3.5 3.0 2.5 2.0 1.5 1.0 0 0.5 1.0 1.5 Total Gate Charge 0.8 0.6 0.4 0 100 Ambient Temperature SCH2819 [MOSFET =10V 0.2 1.0 IT06106 [MOSFET] 1000 V DD =15V = ...
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... Rectangular wave =180 (4) Sine wave =180 0 0 0.1 0.2 0.3 0.4 Average Output Current FSM -- t 3.5 Current waveform 50Hz sine wave 3 2.5 2.0 1.5 1 Time SCH2819 [SBD] 100000 10000 1000 100 1.0 0 0.5 0.6 ...
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... Note on usage : Since the SCH2819 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...