sch2819 Sanyo Semiconductor Corporation, sch2819 Datasheet - Page 2

• Manufacturer Part Number: sch2819
• Description: Mosfet N-channel Silicon Mosfet Sbd Schottky Barrier Diode
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25 C
Package Dimensions
unit : mm
7028-003
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
1
6
1.6
Parameter
5
2
0.5
4
3
0.2
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
SANYO : SCH6
0.2
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
t d (on)
t d (off)
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qgs
Qgd
yfs
Qg
V R
V F
I R
t rr
C
t r
t f
I D =1mA, V GS =0V
V DS =30V, V GS =0V
V GS = 8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =800mA
I D =800mA, V GS =4V
I D =400mA, V GS =2.5V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =4V, I D =1.5A
V DS =10V, V GS =4V, I D =1.5A
V DS =10V, V GS =4V, I D =1.5A
I S =1.5A, V GS =0V
I R =0.5mA
I F =0.5A
V R =15V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
SCH2819
Electrical Connection
Conditions
6
1
5
2
4
3
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
Top view
min
0.4
1.3
30
30
Ratings
typ
0.52
0.52
0.42
165
210
130
2.2
2.2
0.9
22
16
20
23
29
13
9
max
0.48
215
295
120
1.3
1.2
10
10
1
No.8291-2/6
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
pF
ns
V
V
S
V
V
V
A
A
A