ntd30n02 ON Semiconductor, ntd30n02 Datasheet
ntd30n02
Manufacturer Part Number
ntd30n02
Description
Power Mosfet 30 Amps, 24 Volts
Manufacturer
ON Semiconductor
Datasheet
1.NTD30N02.pdf
(5 pages)
Available stocks
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Quantity
Price
Company:
Part Number:
NTD30N02
Manufacturer:
ON Semiconductor
Quantity:
375
Company:
Part Number:
ntd30n02G
Manufacturer:
ON
Quantity:
12 500
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Part Number:
ntd30n02T4
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Quantity:
12 500
NTD30N02
Power MOSFET
30 Amps, 24 Volts
N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Features
•
Typical Applications
•
•
•
•
1. When surface mounted to an FR4 board using 1 in. pad size,
2. When surface mounted to an FR4 board using minimum recommended pad
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
Pb−Free Packages are Available
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
(Cu Area 1.127 sq in).
size, (Cu Area 0.412 sq in).
− Continuous @ T
− Single Pulse (t
Energy − Starting T
(V
L = 1.0 mH, I
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Purposes, 1/8″ from case for 10 seconds
DD
= 24 Vdc, V
L
(pk) = 10 A, R
p
Rating
GS
v10 ms)
A
J
= 25°C
= 10 Vdc,
(T
= 25°C
J
= 25°C unless otherwise noted)
A
= 25°C
G
= 25 W)
Symbol
T
V
R
R
R
J
V
E
I
P
, T
DSS
DM
T
I
qJC
qJA
qJA
GS
AS
D
D
L
stg
−55 to
Value
"20
1.65
100
150
120
260
24
30
75
50
67
1
°C/W
Unit
Vdc
Vdc
Adc
Apk
mJ
°C
°C
W
†For information on tape and reel specifications,
NTD30N02
NTD30N02G
NTD30N02T4
NTD30N02T4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
R
1 2
CASE 369C
DS(on)
STYLE 2
ORDERING INFORMATION
DPAK
G
3
D30N02 = Device Code
Y
WW
G
http://onsemi.com
30 AMPERES
24 VOLTS
4
= 11.2 mW (Typ.)
N−Channel
(Pb−Free)
(Pb−Free)
Package
= Year
= Work Week
= Pb−Free Device
DPAK
DPAK
DPAK
DPAK
D
Publication Order Number:
S
Gate
2500 Tape & Reel
2500 Tape & Reel
MARKING
DIAGRAM
1
75 Units/Rail
75 Units/Rail
Shipping
Drain
Drain
NTD30N02/D
4
2
3
Source
†
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ntd30n02 Summary of contents
Page 1
... R qJA 120 R qJA T 260 °C L Device NTD30N02 NTD30N02G NTD30N02T4 NTD30N02T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com 30 AMPERES 24 VOLTS = 11.2 mW (Typ.) DS(on) N−Channel ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note Vdc 250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...
Page 3
25° 5 3 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. ...
Page 4
C iss 2000 C rss 1500 1000 500 0 10 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS TOTAL GATE CHARGE (nC) G ...
Page 5
... V 0.035 0.050 0.89 Z 0.155 −−− 3.93 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 6.172 0.243 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTD30N02/D MAX 6.22 6.73 2.38 0.88 0.58 1.14 1.01 0.58 2.89 5.45 1.01 −−− 1.27 −−− ...