ntd30n02 ON Semiconductor, ntd30n02 Datasheet - Page 3

• Manufacturer Part Number: ntd30n02
• Description: Power Mosfet 30 Amps, 24 Volts
• Manufacturer: ON Semiconductor

0.04
0.03
0.02
0.01
60
50
40
30
20
10
1.6
1.4
1.2
0.8
0.6
0
1
0
−50
0
2
V
I
V
−25
1
DS
D
V
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
GS
3
GS
= 15 A
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5.4 V
= 10 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
T
J
, JUNCTION TEMPERATURE (°C)
2
4
0
Gate−to−Source Voltage
V
6 V
7 V
GS
8 V
= 9 V
3
25
5
Temperature
4
50
6
T
3.4 V
J
= 25°C
5
75
7
100
6
I
T
8
D
J
= 15 A
= 25°C
4.6 V
4.2 V
3.6 V
4 V
3 V
5 V
http://onsemi.com
125
7
9
150
8
10
3
0.01
0.07
0.06
0.05
0.04
0.03
0.02
0.01
100
0.1
10
60
50
40
30
20
10
1
0
10
1
4
Figure 4. On−Resistance versus Drain Current
Figure 6. Drain−to−Source Leakage Current
V
V
T
DS
T
V
V
GS
J
J
DS
GS
2
= 100°C
= 25°C
T
≥ 10 V
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 0 V
J
, GATE−TO−SOURCE VOLTAGE (VOLTS)
20
= 25°C
8
V
GS
I
D
, DRAIN CURRENT (AMPS)
3
= 4.5 V
and Gate Voltage
versus Voltage
30
12
T
T
T
4
J
J
J
= 150°C
= 100°C
= −55°C
5
40
16
V
GS
6
= 10 V
50
20
7
60
24
8