psmn038 NXP Semiconductors, psmn038 Datasheet
psmn038
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psmn038 Summary of contents
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... PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 1. Description SiliconMAX™ the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN038-100K in SOT96-1 (SO8). 2. Features Very low on-state resistance Fast switching TrenchMOS™ technology. 3. Applications convertor Computer motherboards Switch mode power supplies ...
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... Conditions 150 pulsed pulsed Rev. 01 — 16 January 2001 PSMN038-100K Typ Max Unit 100 V 6.3 A 3.5 W 150 Min Max Unit 100 6 3.5 W ...
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... der Fig 2. Normalized continuous drain current as a function of solder point temperature D. Rev. 01 — 16 January 2001 PSMN038-100K 03aa25 120 100 100 125 150 ------------------ - 100% ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 07897 Product specification N-channel enhancement mode field-effect transistor Conditions mounted on a metal clad substrate Rev. 01 — 16 January 2001 PSMN038-100K Value Unit Figure 4 20 03ad96 ...
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... MHz; Figure 2 Figure 6 /dt = 100 Rev. 01 — 16 January 2001 PSMN038-100K Min Typ Max Unit 100 130 1 0.5 mA 100 ...
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... V 0 º DSon a = --------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 16 January 2001 PSMN038-100K 03ae00 V > DSon 25 º 150 º ( DSon ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03ae01 MHz DSon GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 16 January 2001 PSMN038-100K 03aa35 min typ max ...
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... Product specification N-channel enhancement mode field-effect transistor 03ae02 ºC j 0.8 1 Fig 14. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 16 January 2001 PSMN038-100K 03ae04 6 ( º ...
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... 0.49 0.25 5.0 4.0 6.2 1.27 0.36 0.19 4.8 3.8 5.8 0.019 0.0100 0.20 0.16 0.244 0.050 0.014 0.0075 0.19 0.15 0.228 REFERENCES JEDEC EIAJ MS-012 Rev. 01 — 16 January 2001 PSMN038-100K detail 1.0 0.7 1.05 0.25 0.25 0.1 0.4 0.6 0.039 0.028 0.041 0.01 0.01 0.004 0.016 0.024 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20010116 - Product specification; initial version 9397 750 07897 Product specification N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 PSMN038-100K © Philips Electronics N.V. 2001. All rights reserved ...
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... Rev. 01 — 16 January 2001 PSMN038-100K Philips Semiconductors assumes no © Philips Electronics N.V. 2001 All rights reserved. ...
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... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA71) Rev. 01 — 16 January 2001 PSMN038-100K © Philips Electronics N.V. 2001. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 January 2001 Document order number: 9397 750 07897 N-channel enhancement mode field-effect transistor Printed in The Netherlands PSMN038-100K ...