psmn005 NXP Semiconductors, psmn005 Datasheet - Page 3

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psmn005

Manufacturer Part Number
psmn005
Description
Psmn005-30k Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet

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Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
sp
P der
der
(%)
function of mounting base temperature.
= 25 C; I
120
80
40
0
=
(A)
0
I D
10 -1
10 -2
---------------------- -
P
10 3
10 2
10
tot 25 C
1
P
10 -1
DM
tot
is single pulse.
50
100%
R DSon = V DS / I D
100
150
T sp (ºC)
03aa17
1
200
Rev. 01 — 6 March 2002
DC
Fig 2. Normalized continuous drain current as a
I
der
I der
(%)
120
function of mounting base temperature.
80
40
=
0
0
-------------------
I
10
D 25 C
I
D
50
100%
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
PSMN005-30K
V DS (V)
100
10 ms
100 ms
t p = 10 µs
100 µs
1 ms
150
03ah05
T sp (
10 2
03aa25
o
C)
200
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