sie836df Vishay, sie836df Datasheet - Page 3

• Manufacturer Part Number: sie836df
• Description: N-channel 200-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68742
S-82580-Rev. A, 27-Oct-08
0.14
0.12
0.10
0.08
0.06
15
12
10
9
6
3
0
8
6
4
2
0
0.0
0
0
I
D
On-Resistance vs. Drain Current
V
V
0.5
= 4.1 A
GS
GS
5
V
3
= 10 V
= 8 V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
1.0
I
10
- Total Gate Charge (nC)
V
D
Gate Charge
DS
- Drain Current (A)
6
= 100 V
1.5
15
V
V
9
GS
GS
V
2.0
20
GS
= 4 V
= 5 V
V
= 10 thru 6 V
DS
12
= 160 V
2.5
25
New Product
3.0
30
15
1800
1500
1200
900
600
300
2.4
2.0
1.6
1.2
0.8
0.4
0
5
4
3
2
1
0
- 50
0
0
C
rss
On-Resistance vs. Junction Temperature
I
- 25
D
= 4.1 A
C
1
oss
10
V
V
DS
Transfer Characteristics
GS
T
0
J
- Drain-to-Source Voltage (V)
C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
iss
2
Capacitance
25
20
T
C
= 125 °C
T
50
T
3
C
Vishay Siliconix
C
= - 55 °C
= 25 °C
30
75
SiE836DF
4
V
100
www.vishay.com
GS
40
= 10 V
5
125
150
50
6
3