sie836df Vishay, sie836df Datasheet - Page 4

• Manufacturer Part Number: sie836df
• Description: N-channel 200-v D-s Mosfet
• Manufacturer: Vishay

SiE836DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
4.5
4.0
3.5
3.0
2.5
2.0
10
- 50
1
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
0.4
T
J
= 150 °C
50
0.6
75
0.001
0.01
100
0.1
10
1
100
0.01
I
I
D
0.8
T
D(on)
Safe Operating Area, Junction-to-Ambient
J
= 250 µA
* V
= 25 °C
125
Single Pulse
Limited
GS
T
A
0.1
> minimum V
= 25 °C
New Product
150
V
1.0
DS
- Drain-to-Source Voltage (V)
Limited by R
1
GS
at which R
DS(on)
10
BVDSS
Limited
*
DS(on)
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
IDM Limited
50
40
30
20
10
100
0
0.01
is specified
4
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
1000
5
0.1
V
GS
- Gate-to-Source Voltage (V)
6
1
Time (s)
7
S-82580-Rev. A, 27-Oct-08
Document Number: 68742
T
10
J
T
= 125 °C
J
= 25 °C
8
I
D
100
= 4.1 A
9
1000
10