bs170-d27z Fairchild Semiconductor, bs170-d27z Datasheet - Page 2

• Manufacturer Part Number: bs170-d27z
• Description: Bs170/mmbf170 N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
ON CHARACTERISTICS
V
R
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
Note:
DSS
GSSF
on
off
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FS
GS(th)
DS(ON)
iss
oss
rss
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
(Note 1)
(Note 1)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
GS
DS
GS
DS
GS
DS
DS
DS
DD
GS
DD
GS
DD
GS
DD
GS
= 25 V, V
= V
= 10 V, I
> 2 V
= 10 V, V
= 0 V, I
= 15 V, V
= 10 V, I
= 25 V, I
= 10 V, R
= 25 V, I
= 10 V, R
= 25 V, I
= 10 V, R
= 25 V, I
= 10 V, R
GS
, I
DS(on)
D
D
D
= 100 µA
D
= 1 mA
D
D
D
D
GS
DS
GEN
GEN
GEN
GEN
= 200 mA
= 200 mA
, I
GS
= 200 m A,
= 500 mA,
= 200 m A,
= 500 mA,
= 0 V
D
= 0 V
= 0 V,
= 200 mA
= 25
= 50
= 25
= 50
MMBF170
MMBF170
MMBF170
BS170
BS170
BS170
Type
All
All
All
All
All
All
All
All
Min
0.8
60
Typ
BS170 Rev. C / MMBF170 Rev. D
320
320
2.1
1.2
24
17
7
Max
0.5
10
40
30
10
10
10
10
10
3
5
Units
mS
µA
nA
pF
pF
ns
ns
V
V
pF