bs170-d27z Fairchild Semiconductor, bs170-d27z Datasheet - Page 4

• Manufacturer Part Number: bs170-d27z
• Description: Bs170/mmbf170 N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
V
GS
6 0
4 0
2 0
1 0
5
2
1
1.075
1.025
0.975
0.925
Figure 11. Switching Test Circuit
1
Figure 9. Capacitance Characteristics
1.05
0.95
Figure 7. Breakdown Voltage Variation
1.1
1
-50
I
R
D
with Temperature
GEN
f = 1 MHz
V
= 100µA
-25
2
GS
V
DS
= 0V
3
, DRAIN TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
0
J
V
IN
G
5
2 5
.
5 0
D
S
V
1 0
DD
7 5
R
.
L
(continued)
DUT
1 0 0
2 0
.
C iss
C oss
3 0
BS170 / MMBF170
1 2 5
V
C rss
OUT
1 5 0
5 0
Figure 8. Body Diode Forward Voltage Variation with
Output, V out
Input, V in
0.005
0.001
1 0
Figure 12. Switching Waveforms
Figure 10. Gate Charge Characteristics
Current and Temperature.
0.05
0.01
8
6
4
2
0
0.5
0.1
0
t
2
1
d(on)
0.2
10%
I
D
V
= 5 0 0 m A
T = 125°C
GS
J
0.4
0.4
V
= 0V
SD
t
50%
on
10%
, BODY DIODE FORWARD VOLTAGE (V)
Q
t
0.6
Pulse Width
90%
r
g
0.8
, GATE CHARGE (nC)
25°C
0.8
t
d(off)
V
1.2
DS
50%
BS170 Rev. C / MMBF170 Rev. D
-55°C
= 25V
.
1
90%
t
10%
off
90%
1.6
.
1.2
t
Inverted
f
1.4
2