cy20aah-8f Renesas Electronics Corporation., cy20aah-8f Datasheet

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... CY20AAH-8F Nch IGBT for Strobe Flasher Features V : 400 V CES I : 130 A CM Drive voltage: 2.5 V Outline RENESAS Package code: PRSP0008DA-B (Package name: SOP-8 <8P2S-B> Note: PIN 3 is for the Gate drive only. Note that current from the main circuit cannot flow into this section. (Please see page 3) ...

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... CY20AAH-8F Electrical Characteristics Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Performance Curves Rev.2.00, Nov 29, 2005, page Symbol Min. Typ. Max. V 450 — — (BR)CES I — — 10 CES I — — ...

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... CY20AAH-8F Application Example V CM Trigger Transformer + – Maximum operation conditions V = 350 130 400 µ 2 Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protects the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied satisfy the rating of maximum pulse collector current. And turn-off dv/dt must become less than 400 V/ s ...

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... DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Dimension in Millimeters Reference A A Symbol 2 1 Min Nom D 4 0.13 0.15 0° H 5.7 E Detail F e 1.12 1. 0.2 Standard order code example CY20AAH-8F-T13 Max 5.0 5.2 4.4 4.6 1.5 0.1 0.2 1.8 0.4 0.5 0.2 10° 6.0 6.3 1.42 0.1 0.4 0.6 ...

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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...