cy20aah-8f Renesas Electronics Corporation., cy20aah-8f Datasheet - Page 3

• Manufacturer Part Number: cy20aah-8f
• Description: Nch Igbt For Strobe Flasher
• Manufacturer: Renesas Electronics Corporation.

CY20AAH-8F
Application Example
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protects the
2. Gate drive voltage during on-period must be applied satisfy the rating of maximum pulse collector current. And
3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pin 1 and 2 which a large
4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (Ixe ≤ 130 A:
5. Total operation hours applied to the Gate-Emitter voltage must be within 5,000 hours when V
Rev.2.00,
device from electrostatic charge.
turn-off dv/dt must become less than 400 V/ s. In general, when R
current flow are given to the device as the device signal emitter, the device may be damaged due to large current
since the specified gate voltage is not applied to the IGBT within the device.
full luminescence condition) of main capacitor. Repetition period under full luminescence conditions is over
3 seconds.
Nov 29, 2005,
V
CM
+
–
Maximum operation conditions
V
I
C
V
CP
CM
GE
M
Trigger Transformer
= 130 A
= 400 µF
= 2.5 V
= 350 V
page 3 of 4
8
1
7
2
Xe Tube
6
3
5
4
G(off)
= 68 , it is satisfied.
RD3CYD08
(IGBT Drive IC)
V
GG
Control Signal
GE
is driven at 4 V.