gt30j121 TOSHIBA Semiconductor CORPORATION, gt30j121 Datasheet - Page 2

• Manufacturer Part Number: gt30j121
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Switching loss
Note 1: Switching time measurement circuit and input/output waveforms
Note 2: Switching loss measurement waveforms
0
0
−V
Characteristics
V
V
GE
I
GE
CE
C
GT30J324
Turn-on delay time
Rise time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Turn-on switching
loss
Turn-off switching
loss
R
G
I
C
90%
E
off
L
(Ta = 25°C)
V
CE
V
V
CC
V
Symbol
GE (OFF)
t
t
CE (sat)
I
I
d (on)
d (off)
C
GES
E
E
CES
t
t
on
off
t
t
ies
on
off
r
f
10%
V
V
I
I
V
Inductive Load
V
V
C
C
GE
CE
CE
CC
GG
= 3 mA, V
= 30 A, V
0
0
= 600 V, V
= 10 V, V
= ±20 V, V
= 300 V, I
= +15 V, R
E
on
2
V
V
I
GE
CE
C
GE
Test Condition
CE
GE
C
5%
GE
= 15 V
CE
= 5 V
G
t
= 30 A
10%
d (off)
= 0, f = 1 MHz
= 24 Ω
= 0
= 0
90%
t
off
t
f
90%
(Note 1)
(Note 2)
10%
Min
3.5
―
―
―
―
―
―
―
―
―
―
―
―
10%
10%
t
d (on)
4650
Typ.
0.09
0.07
0.24
0.30
0.05
0.43
1.00
0.80
2.0
―
―
―
t
t
on
GT30J121
r
2006-11-01
±500
2.45
Max
1.0
6.5
90%
―
―
―
―
―
―
―
―
―
10%
Unit
mA
mJ
nA
pF
μs
V
V