gt30j121 TOSHIBA Semiconductor CORPORATION, gt30j121 Datasheet - Page 5

• Manufacturer Part Number: gt30j121
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
3000
1000
10
10
10
10
300
100
100
10
10
10
0.3
0.1
30
10
30
10
−1
−2
−3
−4
10
3
1
0.1
2
1
0
1
−5
Curves must be
derated linearly
with increase in
temperature.
*: Single pulse
Common emitter
V GE = 0
f = 1 MHz
Tc = 25°C
I C max (pulsed)*
I C max (continuous)
Tc = 25°C
0.3
10
Collector-emitter voltage V
Collector-emitter voltage V
DC operation
3
−4
1
10
Safe Operating Area
−3
Pulse width t
10
3
r
10
C – V
th
−2
(t) – t
30
10
CE
10
w
−1
w
30
100
(s)
10
CE
CE
100
0
100 μs*
10 ms*
1 ms*
Tc = 25°C
(V)
(V)
300
10
300
C oes
1
C res
C ies
50 μs*
1000
1000
10
2
5
500
400
300
200
100
100
0.3
0.1
30
10
0
3
1
0
1
Common emitter
R L = 10 Ω
Tc = 25°C
T j ≤ 125°C
V GE = 15 V
R G = 24 Ω
Collector-emitter voltage V
3
40
300
V CE = 100 V
Gate charge Q
Reverse Bias SOA
10
V
200
CE
80
, V
30
GE
– Q
120
G
100
G
(nC)
CE
160
(V)
300
GT30J121
2006-11-01
1000
200
20
16
12
8
4
0