gt8g136 TOSHIBA Semiconductor CORPORATION, gt8g136 Datasheet - Page 4

• Manufacturer Part Number: gt8g136
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
200
160
120
200
160
120
100
80
40
80
40
10
0
0
0
0
1
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
C res
1
1
V GE = 4.0 V
10
C oes
2
2
I
I
C – V
C
C
– V
– V
V GE =4.0 V
CE
CE
CE
3
3
Common emitter
V GE = 0 V
f = 1 MHz
Ta = 25°C
100
Common emitter
Ta = −10°C
Common emitter
Ta[ = 70°C
C ies
3.5
4
4
3.0
2.5
2.5
3.5
3.0
1000
5
5
4
600
500
400
300
200
100
200
160
120
160
120
80
40
80
40
0
0
0
0
0
0
Collector-emitter voltage V CE (V)
V CE
10
1
1
Gate-emitter voltage V
Ta = −10°C
Gate charge Q G (nC)
25
V
CE
V GE = 4.0 V
20
2
I
I
2
, V
C
C
– V
– V
GE
V GE
Common emitter
V CC = 300 V
R L = 2.0 Ω
Ta = 25°C
CE
GE
– Q
30
3
3
G
Common emitter
Ta = 25°C
70
Common emitter
GE
V CE = 5
(V)
40
4
4
3.5
3.0
2.5
GT8G136
2007-04-23
50
5
5
6
5
4
3
2
1
0