byg90-90 NXP Semiconductors, byg90-90 Datasheet - Page 2

• Manufacturer Part Number: byg90-90
• Description: Schottky Barrier Rectifier Diode
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Refer to SOD106A standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
1996 May 13
V
V
V
I
I
I
T
T
SYMBOL
F(AV)
FSM
RSM
Low switching losses
High breakdown voltage
Capability of absorbing very high
surge current
Fast recovery time
Guard ring protected
Plastic SMD package.
Low power switched-mode power
supplies
Rectifying
Polarity protection.
stg
j
R
RRM
RWM
Schottky barrier rectifier diode
losses P
P
R
and I
R
F(AV)
continuous reverse voltage
repetitive peak reverse voltage
crest working reverse voltage
average forward current
non-repetitive peak forward current
non-repetitive peak reverse current
storage temperature
junction temperature
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
rating will be available on request.
PARAMETER
DESCRIPTION
The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar
technology, and encapsulated in the rectangular SOD106A plastic SMD
package.
handbook, 4 columns
k
Top view
cathode identifier
T
R
V
t = 8.3 ms half sine wave;
JEDEC method
t
Fig.1 Simplified outline (SOD106A) and symbol.
p
amb
R(equiv)
th j-a
= 100 s
2
= 100 C; see Fig.2;
= 13.5 K/W; note 1;
= 0.2 V; note 2
CONDITIONS
a
65
MIN.
Product specification
90
90
90
1
30
0.5
+150
150
BYG90-90
MAX.
MAM129 - 1
V
V
V
A
A
A
C
C
UNIT