rf3145 RF Micro Devices, rf3145 Datasheet - Page 4

• Manufacturer Part Number: rf3145
• Description: Quad-band Gsm/edge/gsm850/dcs/pcs Power Amplifier Module Rf3145
• Manufacturer: RF Micro Devices

RF3145
4 of 18
GSM US 900MHz Band
Operating Frequency Range
Maximum Output Power
Total Efficiency (PAE)
Input Power for Max Output
Folding Conversion Gain
Output Noise Power
Forward Isolation
Second Harmonic
Third Harmonic
All other Non-Harmonic Spurious
Cross Band Coupling 2F
Input Impedance
Input VSWR
Output Load VSWR
Output Load Ruggedness
Output Load Impedance
Note: V
Power Control V
GSM900 GMSK Mode
Power Control “ON”
Power Control “OFF”
Power Control Range
V
V
Turn On/Off Time
RAMP
RAMP
Input Capacitance
Input Current
RAMP,MAX
Parameter
=3/8*V
RAMP
0
,
BATT
+0.18<1.6V
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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+34.5
Min.
880
45
+2
Specification
+32.5
+35.0
Typ.
10:1
-82
-86
6:1
0.2
55
35
+4
50
50
33
15
Max.
2.5:1
0.25
915
-80
-84
-25
-36
-20
1.6
+6
10
-5
-5
-7
0
4
Unit
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
MHz
dB
dB
μA
μS
pF
%
%
Ω
Ω
V
V
Temp=+25 °C, V
BandSelect=Low, V
V
Freq=880MHz to 915MHz, 25% Duty Cycle,
Pulse Width=1154μs, TX EN=High
Temp = 25°C, V
V
Temp=+85
V
At P
At P
F
measured at 935MHz in 100kHz RBW (Max
Power)
RBW=100kHz, 925MHz to 935MHz,
P
RBW=100kHz, 935MHz to 960MHz,
P
Over all power levels
Over all power levels
Measured at DCS/PCS port. Over all power lev-
els.
Over all power levels
Spurious<-36dBm, V
RBW=3MHz
Load impedance presented at RF OUT pad
Max P
Minimum P
V
DC to 2MHz
V
V
TX_ENABLE=0V, V
0
RAMP
RAMP
RAMP
OUT
OUT
RAMP
RAMP
RAMP
=915MHz, other signal 895MHz at -40dBm,
OUT
OUT
>+5dBm
>+5dBm
=V
=0.2V
OUT
=0.2V to 1.6V
=1.6V
=0V to 1.6V
=V
=31.5dBm
,
MAX
RAMP,MAX
, Voltage supplied to the input
RAMP,MAX
o
OUT
, V
C, V
CC
, Voltage supplied to the input.
CC
BATT
CC
=3.5V
Condition
=3.5V,
RAMP
=3.5V,
, P
MODE
=3.0V, V
RAMP
IN
=0.2, P
=+4dBm
=Low,
=0.2V to 1.6V,
RAMP
Rev A4 DS050919
IN
=+6dBm
=V
RAMP,MAX