mrf7s18125ah Freescale Semiconductor, Inc, mrf7s18125ah Datasheet - Page 7

• Manufacturer Part Number: mrf7s18125ah
• Description: N - Channel Enhancement - Mode Lateral Mosfets
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
5
4
3
2
1
0
60
59
58
57
56
55
54
53
52
51
50
−35
−40
−45
−50
−55
−60
−65
−70
−75
34
1810
0
V
I
EDGE Modulation
P1dB = 51.60 dBm
(144.6 W)
DQ
DD
P3dB = 52.25 dBm (167.9 W)
Figure 7. Pulsed CW Output Power versus
= 1100 mA
Figure 11. Spectral Regrowth at 400 kHz
= 28 Vdc
35
20
Figure 9. EVM versus Frequency
1820
36
40
P6dB = 52.74 dBm (187.8 W)
P
1830
versus Output Power
37
out
P
60
in
f, FREQUENCY (MHz)
, OUTPUT POWER (WATTS)
, INPUT POWER (dBm)
V
12 μsec(on), 1% Duty Cycle, f = 1840 MHz
P
DD
Input Power
43 W Avg.
out
85_C
38
15 W Avg.
1840
T
80
= 28 Vdc, I
= 78 W Avg.
C
= −30_C
39
100
1850
DQ
40
120
= 1100 mA, Pulsed CW
1860
41
V
I
f = 1840 MHz
EDGE Modulation
DQ
140
DD
25_C
= 1100 mA
= 28 Vdc
TYPICAL CHARACTERISTICS
42
160
1870
Actual
43
Ideal
180
1880
44
200
17.5
16.5
15.5
14.5
13.5
12.5
18
17
16
15
14
13
10
−50
−55
−60
−65
−70
−75
−80
G
−45
−50
−55
−60
−65
−70
−75
−80
−85
ps
Figure 8. Power Gain and Drain Efficiency
η
0
D
SR @ 600 kHz
Figure 10. Spectral Regrowth at 400 kHz and
1810
SR @ 400 kHz
20
Figure 12. Spectral Regrowth at 600 kHz
T
C
25_C
85_C
P
= −30_C
out
1820
versus Output Power
40
, OUTPUT POWER (WATTS) CW
600 kHz versus Frequency
MRF7S18125AHR3 MRF7S18125AHSR3
P
versus Output Power
60
out
1830
f, FREQUENCY (MHz)
P
, OUTPUT POWER (WATTS)
out
15 W Avg.
= 78 W Avg.
78 W Avg.
43 W Avg.
80
V
I
f = 1840 MHz
DQ
1840
DD
V
f = 1840 MHz, EDGE Modulation
= 1100 mA
85_C
100
DD
= 28 Vdc
43 W Avg.
= 28 Vdc, I
100
1850
120
T
C
= −30_C
25_C
15 W Avg.
140
DQ
V
I
EDGE Modulation
1860
DQ
DD
= 1100 mA
−30_C
= 1100 mA
25_C
= 28 Vdc
160
85_C
1870
300
180
70
65
60
55
50
45
40
35
30
25
20
15
1880
200
7