mrf7s19210h Freescale Semiconductor, Inc, mrf7s19210h Datasheet
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... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S19210H MRF7S19210HR3 MRF7S19210HSR3 = 28 Volts 1930 - 1990 MHz AVG ...
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... Adjacent Channel Power Ratio Input Return Loss Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S19210HR3 MRF7S19210HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS ...
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... Min Typ Max = 1400 mA, 1930 - 1990 MHz Bandwidth — 15 — — 50 — — 0.9 — — 0.95 — — 2.82 — — 28.9 — — 0.019 — — 0.008 — MRF7S19210HR3 MRF7S19210HSR3 Unit MHz MHz dB ° ns ° dB/°C dBm/°C 3 ...
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... Microstrip Z11 0.304″ x 1.102″ Microstrip Z12 0.295″ x 0.276″ Microstrip Figure 1. MRF7S19210HR3(HSR3) Test Circuit Schematic Table 5. MRF7S19210HR3(HSR3) Test Circuit Component Designations and Values Part C1, C9, C11, C12, C19, C20 10 μ Chip Capacitors C2, C8 100 nF Chip Capacitors C3, C6, C7, C10, C14, C15, 8 ...
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... Figure 2. MRF7S19210HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C10 C11 C12 C21 C14 C16 C13 C15 C17 C22 C19 C20 C18 MRF7S19210H Rev 0 MRF7S19210HR3 MRF7S19210HSR3 5 ...
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... P , OUTPUT POWER (WATTS) CW out Figure 4. Power Gain versus Output Power 20 19.5 −1 19 −2 18.5 −3 18 −4 17.5 −5 30 MRF7S19210HR3 MRF7S19210HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 1400 mA DQ PARC IRL ACPR 1900 1920 1940 1960 1980 2000 f, FREQUENCY (MHz Watts Avg ...
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... Figure 9. MTTF versus Junction Temperature 60 −5 −30_C 25_C 50 −10 85_C 40 −15 − −25 85_C 10 −30 −30_C 0 −35 100 300 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 29%. DD out D MRF7S19210HR3 MRF7S19210HSR3 230 250 7 ...
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... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF7S19210HR3 MRF7S19210HSR3 CDMA TEST SIGNAL −10 −20 −30 −40 Input Signal −50 −60 −70 − ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Under Matching Test Network Z Z source load f = 1880 MHz Output Matching Network MRF7S19210HR3 MRF7S19210HSR3 9 ...
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... INPUT POWER (dBm) in NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Z source Ω P1dB 5.72 - j5.51 Figure 13. Pulsed CW Output Power versus Input Power @ 1930 MHz MRF7S19210HR3 MRF7S19210HSR3 Ideal Actual 54 53 ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7S19210HR3 MRF7S19210HSR3 11 ...
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... MRF7S19210HR3 MRF7S19210HSR3 12 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF7S19210HR3 MRF7S19210HSR3 13 ...
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... MRF7S19210HR3 MRF7S19210HSR3 14 RF Device Data Freescale Semiconductor ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Dec. 2008 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S19210HR3 MRF7S19210HSR3 15 ...
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... Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S19210HR3 MRF7S19210HSR3 Document Number: MRF7S19210H Rev. 0, 12/2008 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...