mrf21120 Freescale Semiconductor, Inc, mrf21120 Datasheet - Page 3

• Manufacturer Part Number: mrf21120
• Description: The Rf Sub-micron Mosfet Line Rf Power Field Effect Trasistor N-channel Enhancement-mode Lateral Mosfet
• Manufacturer: Freescale Semiconductor, Inc

(2) Device measured in push–pull configuration.
ELECTRICAL CHARACTERISTICS — continued
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued)
MOTOROLA RF DEVICE DATA
Common–Source Amplifier Power Gain
Drain Efficiency
Output Mismatch Stress
(V
f1 = 2170.0 MHz)
(V
f1 = 2170.0 MHz)
(V
f = 2.17 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
DD
DD
DD
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
out
out
out
= 120 W CW, I
= 120 W CW, I
= 120 W CW, I
Characteristic
DQ
DQ
DQ
= 2
= 2
= 2
500 mA,
500 mA,
500 mA,
(T
C
= 25°C unless otherwise noted)
Symbol
G
Ψ
η
ps
Min
—
—
No Degradation In Output Power
Before and After Test
10.5
Typ
42
Max
—
—
MRF21120
Unit
dB
%
3