mrf21090r3 Freescale Semiconductor, Inc, mrf21090r3 Datasheet - Page 4

• Manufacturer Part Number: mrf21090r3
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

4
MRF21090R3 MRF21090SR3
60
50
40
30
20
10
0
15
14
13
12
10
11
2080
−35
−50
−25
−30
−40
−45
−55
1
1
Figure 5. Intermodulation Distortion versus
Figure 7. Power Gain versus Output Power
V
f = 2140 MHz
Two−Tone Measurement
100 kHz Tone Spacing
DD
Figure 3. Class AB Broadband Circuit
2100
= 28 Vdc
800 mA
500 mA
2000 mA
1500 mA
1000 mA
P
2120
IMD
IRL
G
η
out
P
ps
out
, OUTPUT POWER (WATTS) PEP
Performance
f, FREQUENCY (MHz)
Output Power
, OUTPUT POWER (WATTS) PEP
TYPICAL PERFORMANCE (IN FREESCALE TEST FIXTURE)
2140
2000 mA
10
10
V
P
I
Two−Tone Measurement
100 kHz Tone Spacing
DQ
DD
out
= 750 mA
= 90 W (PEP)
1500 mA
1000 mA
= 28 Vdc
2160
500 mA
800 mA
V
f = 2140 MHz
Two−Tone Measurement
100 kHz Tone Spacing
DD
= 28 Vdc
2180
2200
−5
−10
−15
−20
−25
−30
−35
100
100
10.8
10.6
11.8
11.6
11.4
11.2
11.0
−20
−30
−40
−50
−60
−70
−80
20
30
25
20
15
10
1
5
Figure 8. Power Gain and Intermodulation
Figure 6. Intermodulation Distortion Products
Figure 4. CDMA ACPR, Power Gain and Drain
V
I
f = 2140 MHz
Two−Tone Measurement
100 kHz Tone Spacing
0
DQ
DD
V
I
f = 2140 MHz
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
DQ
22
DD
= 750 mA
= 28 Vdc
Distortion versus Supply Voltage
= 1000 mA
G
= 28 Vdc
η
ps
5.0
Efficiency versus Output Power
24
P
P
V
out
versus Output Power
out
DS
ACPR
, OUTPUT POWER (WATTS) AVG.
, OUTPUT POWER (WATTS) PEP
, DRAIN VOLTAGE (VOLTS)
26
10
10
28
P
I
f = 2140 MHz
Two−Tone Measurement
100 kHz Tone Spacing
Fixture Tuned for 28 Volts
DQ
3rd Order
5th Order
7th Order
out
Freescale Semiconductor
IMD
= 750 mA
= 90 W (PEP)
15
30
G
ps
RF Device Data
32
20
34
−22
−24
−26
−28
−30
−32
−34
100
−20
−30
−40
−50
−60
−70