mrf5s19060n Freescale Semiconductor, Inc, mrf5s19060n Datasheet - Page 6

• Manufacturer Part Number: mrf5s19060n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF5S19060NR1 MRF5S19060NBR1
6
17
16
15
14
13
12
1
950 mA
I
750 mA
550 mA
350 mA
DQ
= 1150 mA
Figure 5. Two - Tone Power Gain versus
P
out
, OUTPUT POWER (WATTS) PEP
V
f1 = 1960 MHz, f2 = 1962.5 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P
DD
Output Power
= 28 Vdc
14.2
13.8
13.6
13.4
13.2
14.8
14.6
14.4
14.2
13.8
13.6
14
13
14
1900
10
1900
V
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
V
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
DD
DD
= 28 Vdc, P
= 28 Vdc, P
1920
1920
TYPICAL CHARACTERISTICS
out
out
1940
1940
= 30 W (Avg.), I
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
= 12 W (Avg.), I
100
1960
1960
DQ
DQ
= 750 mA
= 750 mA
1980
1980
−45
−60
−15
−20
−25
−30
−35
−40
−50
−55
1
Figure 6. Third Order Intermodulation Distortion
I
DQ
G
2000
2000
IRL
ACPR
ps
550 mA
= 350 mA
ACPR
IRL
IM3
η
η
IM3
G
D
D
ps
1150 mA
2020
2020
out
out
P
39
37
35
out
−25
−31
−37
24
23
22
−43
−35
−41
−47
−53
= 12 Watts Avg.
= 30 Watts Avg.
versus Output Power
, OUTPUT POWER (WATTS) PEP
V
f1 = 1960 MHz, f2 = 1962.5 MHz
Two −Tone Measurements,
2.5 MHz Tone Spacing
DD
= 28 Vdc
950 mA
−5
−10
−15
−20
−5
−10
−15
−20
10
Freescale Semiconductor
750 mA
RF Device Data
100