mrf6s27085h Freescale Semiconductor, Inc, mrf6s27085h Datasheet - Page 6

• Manufacturer Part Number: mrf6s27085h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

6
MRF6S27085HR3 MRF6S27085HSR3
17.5
12.5
−10
−20
−30
−40
−50
−60
7.5
2.5
20
15
10
0
5
0
0.1
Figure 7. Intermodulation Distortion Products
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2645 MHz
7th Order
3rd Order
5th Order
η
DD
G
Figure 10. Power Gain and Drain Efficiency
D
ps
= 28 Vdc, P
P
versus CW Output Power
out
out
versus Tone Spacing
TWO−TONE SPACING (MHz)
, OUTPUT POWER (WATTS) CW
= 85 W (PEP), I
1
10
DQ
45
40
35
30
25
20
15
10
5
= 900 mA
V
f = 2645 MHz
DD
V
Single−Carrier N−CDMA, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
Power Gain and Drain Efficiency versus Output
Figure 9. Single - Carrier N - CDMA ACPR, ALT1,
DD
G
= 28 Vdc, I
10
ps
= 28 Vdc, I
P
out
TYPICAL CHARACTERISTICS
, OUTPUT POWER (WATTS) AVG. W−CDMA
DQ
DQ
= 900 mA
= 900 mA, f = 2645 MHz
10
100
100
Power
45
40
35
30
25
20
15
5
10
49
48
56
55
54
53
52
51
50
47
46
16
15
14
13
12
11
30
1
Figure 11. Power Gain versus Output Power
ACPR
Figure 8. Pulse CW Output Power versus
31
ALT1
η
P1dB = 51 dBm (126.74 W)
D
32
P
out
100
33
, OUTPUT POWER (WATTS) CW
P3dB = 51.72 dBm (148.54 W)
P
−30
−35
−40
−45
−50
−55
−60
−65
−70
in
, INPUT POWER (dBm)
Input Power
34
V
DD
10
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2645 MHz
DD
= 12 V
= 28 Vdc, I
35
Freescale Semiconductor
36
DQ
16 V
= 900 mA
37
20 V
RF Device Data
I
f = 2645 MHz
DQ
24 V
38
Ideal
100
= 900 mA
Actual
39
28 V
32 V
40